DRV8106 Automotive Half Bridge Gate Driver IC

DRV8106-Q1 Automotive Half-Bridge Smart Gate Driver With Wide Common Mode Inline Current Sense Amplifier IC

Description:

The DRV8106-Q1 is a highly integrated half-bridge gate driver, capable of driving high-side and low-side N-channel power MOSFETs. It generates the proper gate drive voltages using an integrated doubler charge pump for the high-side and a linear regulator for the low-side.

The device uses a smart gate drive architecture to reduce system cost and improve reliability. The gate driver optimizes dead time to avoid shoot-through conditions, provides control to decreasing electromagnetic interference (EMI) through adjustable gate drive current, and protects against drain to source and gate short conditions with VDS and VGS monitors.

A wide common mode shunt amplifier provides inline current sensing to continuously measure motor current even during recirculating windows. The amplifier can be used in low-side or high-side sense configurations if inline sensing is not required.

The DRV8106-Q1 provide an array of protection features to ensure robust system operation. These include under and overvoltage monitors for the power supply and charge pump, VDS overcurrent and VGS gate fault monitors for the external MOSFETs, offline open load and short circuit diagnostics, and internal thermal warning and shutdown protection.

Features :

AEC-Q100 qualified for automotive applications:
Temperature grade 1: –40°C to +125°C, TA
Half-bridge smart gate driver
4.9-V to 37-V (40-V abs. max) operating range
Doubler charge pump for 100% PWM
Pin to pin gate driver variants
DRV8705-Q1: H-bridge with low-side amplifier
DRV8706-Q1: H-bridge with inline amplifier
Smart gate drive architecture
Adjustable slew rate control
0.5-mA to 62-mA peak source current output
0.5-mA to 62-mA peak sink current output
Integrated dead-time handshaking
Wide common mode current shunt amplifier
Supports inline, high-side, or low-side
Adjustable gain settings (10, 20, 40, 80 V/V)
Integrated feedback resistors
Adjustable PWM blanking scheme
Multiple interface options available
SPI: Detailed configuration and diagnostics
H/W: Simplified control and less MCU pins
Spread spectrum clocking for EMI reduction
Compact VQFN package with wettable flanks
Integrated protection features
Dedicated driver disable pin (DRVOFF)
Supply and regulator voltage monitors
MOSFET VDS overcurrent monitors
MOSFET VGS gate fault monitors
Charge pump for reverse polarity MOSFET
Offline open load and short circuit diagnostics
Device thermal warning and shutdown
Fault condition interrupt pin (nFAULT)

Specifications:

Number of full bridges 1/2 Vs (Min) (V) 4.5 Vs ABS (Max) (V) 40

Sleep current (uA) 2.5

Control mode PWM Control interface Hardware (GPIO), SPI Features Inline Current Sense Amplifier, Smart Gate Drive Rating Automotive Operating temperature range (C) -40 to 125

Environmental & Export Classifications