IRFB4310PBF 100V 130A FET HEXFET Power Mosfet IRFB7440PBF 40V 120A
100V 130A FET HEXFET Power Mosfet
,IRFB4310PBF
,IRFB7440PBF
IRFB7440PBF 40V 120A IRFB4310PBF 100V 130A IRFB4115PBF 150v 104A Transistors TO-220AB HEXFET FETs MOSFETs
Transistors N-Channel 180A 200W Through Hole TO-220AB HEXFET FETs MOSFETs
---IRFB7440PBF 40V 120A IRFB4310PBF 100V 130A IRFB4115PBF 150v 104A
Description:
This HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area.
Additional features of this product are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device for use in a wide variety of applications.
N-Channel 180A (Tc) 200W (Tc) Through Hole TO-220AB Specification:
| Category | Discrete Semiconductor Products | 
| Transistors - FETs, MOSFETs - Single | |
| Mfr | Infineon Technologies | 
| Series | HEXFET® | 
| Package | Tube | 
| FET Type | N-Channel | 
| Technology | MOSFET (Metal Oxide) | 
| Drain to Source Voltage (Vdss) | 40 V | 
| Current - Continuous Drain (Id) @ 25°C | 180A (Tc) | 
| Drive Voltage (Max Rds On, Min Rds On) | 10V | 
| Rds On (Max) @ Id, Vgs | 3.7mOhm @ 75A, 10V | 
| Vgs(th) (Max) @ Id | 4V @ 250µA | 
| Gate Charge (Qg) (Max) @ Vgs | 150 nC @ 10 V | 
| Vgs (Max) | ±20V | 
| Input Capacitance (Ciss) (Max) @ Vds | 4340 pF @ 25 V | 
| FET Feature | - | 
| Power Dissipation (Max) | 200W (Tc) | 
| Operating Temperature | -55°C ~ 175°C (TJ) | 
| Mounting Type | Through Hole | 
| Supplier Device Package | TO-220AB | 
| Package / Case | TO-220-3 | 
| Base Product Number | IRF1404 | 
 
 
| ATTRIBUTE | DESCRIPTION | 
|---|---|
| RoHS Status | ROHS3 Compliant | 
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | 
| REACH Status | REACH Unaffected | 
| ECCN | EAR99 | 
| HTSUS | 8541.29.0095 | 
 
 

 
 
 
     
        
