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Home ProductsDiscrete SemiconductorsIRF1404ZPBF N Channel Transistor 180A 200W HEXFET FET MOSFET
IRF1404ZPBF N Channel Transistor 180A 200W HEXFET FET MOSFET
IRF1404ZPBF N Channel Transistor 180A 200W HEXFET FET MOSFET IRF1404ZPBF N Channel Transistor 180A 200W HEXFET FET MOSFET

IRF1404ZPBF N Channel Transistor 180A 200W HEXFET FET MOSFET

Product Details:
Place of Origin: CHINA
Brand Name: Infineon Technologies/International Rectifier IOR
Certification: ROHS
Model Number: IRF1404ZPBF
Payment & Shipping Terms:
Minimum Order Quantity: 10pieces
Price: Negotiated
Packaging Details: Standard package
Delivery Time: 2-15days
Payment Terms: T/T, Western Union
Supply Ability: 500000pcs
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Detail Information
Family: Discrete Semiconductor Products Category: Electronic Components-MOSFET (Metal Oxide)
Series: HEXFET MOSFET (Metal Oxide) Base Part Number: IRF1404
Details: N-Channel 180A (Tc) 200W (Tc) Through Hole TO-220AB Type: Transistors - FETs, MOSFETs - Single
Description: MOSFET N-CH 40V 180A TO220AB Package: TO220
Mounting Type: Through Hole
High Light:

IRF1404ZPBF N Channel Transistor

,

180A 200W HEXFET FET MOSFET

,

N Channel Transistor 180A 200W

Product Description

IRF1404ZPBF Transistors N-Channel 180A 200W Through Hole TO-220AB HEXFET FETs MOSFETs

 

N-Channel 180A (Tc) 200W (Tc) Through Hole TO-220AB Specification:

Category
Discrete Semiconductor Products
　
Transistors - FETs, MOSFETs - Single
Mfr
Infineon Technologies
Series
HEXFET®
Package
Tube
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
40 V
Current - Continuous Drain (Id) @ 25°C
180A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
3.7mOhm @ 75A, 10V
Vgs(th) (Max) @ Id
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
150 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
4340 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
200W (Tc)
Operating Temperature
-55°C ~ 175°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-220AB
Package / Case
TO-220-3
Base Product Number
IRF1404

 

Description

This HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area.

Additional features of this product are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device for use in a wide variety of applications.

 

Environmental & Export Classifications
ATTRIBUTE DESCRIPTION
RoHS Status ROHS3 Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS

8541.29.0095

 

Part number IRF1404ZPBF
Base part number IRF1404
EU RoHS Compliant with Exemption
ECCN (US) EAR99
Part Status Active
HTS 8541.29.00.95

 

 

IRF1404ZPBF N Channel Transistor 180A 200W HEXFET FET MOSFET 0IRF1404ZPBF N Channel Transistor 180A 200W HEXFET FET MOSFET 1

 

 

Tag:

Infineon HEXFET Power MOSFET

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