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Home > products > Discrete Semiconductors > IRF1404ZPBF N Channel Transistor 180A 200W HEXFET FET MOSFET

IRF1404ZPBF N Channel Transistor 180A 200W HEXFET FET MOSFET

Category:
Discrete Semiconductors
Price:
Negotiated
Payment Method:
T/T, Western Union
Specifications
Family:
Discrete Semiconductor Products
Category:
Electronic Components-MOSFET (Metal Oxide)
Series:
HEXFET MOSFET (Metal Oxide)
Base Part Number:
IRF1404
Details:
N-Channel 180A (Tc) 200W (Tc) Through Hole TO-220AB
Type:
Transistors - FETs, MOSFETs - Single
Description:
MOSFET N-CH 40V 180A TO220AB
Package:
TO220
Mounting Type:
Through Hole
High Light:

IRF1404ZPBF N Channel Transistor

,

180A 200W HEXFET FET MOSFET

,

N Channel Transistor 180A 200W

Introduction

IRF1404ZPBF Transistors N-Channel 180A 200W Through Hole TO-220AB HEXFET FETs MOSFETs

 

N-Channel 180A (Tc) 200W (Tc) Through Hole TO-220AB Specification:

Category
Discrete Semiconductor Products
 
Transistors - FETs, MOSFETs - Single
Mfr
Infineon Technologies
Series
HEXFET®
Package
Tube
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
40 V
Current - Continuous Drain (Id) @ 25°C
180A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
3.7mOhm @ 75A, 10V
Vgs(th) (Max) @ Id
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
150 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
4340 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
200W (Tc)
Operating Temperature
-55°C ~ 175°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-220AB
Package / Case
TO-220-3
Base Product Number
IRF1404

 

Description

This HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area.

Additional features of this product are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device for use in a wide variety of applications.

 

Environmental & Export Classifications
ATTRIBUTE DESCRIPTION
RoHS Status ROHS3 Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS

8541.29.0095

 

Part number IRF1404ZPBF
Base part number IRF1404
EU RoHS Compliant with Exemption
ECCN (US) EAR99
Part Status Active
HTS 8541.29.00.95

 

 

IRF1404ZPBF N Channel Transistor 180A 200W HEXFET FET MOSFETIRF1404ZPBF N Channel Transistor 180A 200W HEXFET FET MOSFET

 

 

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Stock:
MOQ:
10pieces