IHW30N160R2 IGBT Transistor H30R1602 Power Semiconductor
IHW30N160R2 IGBT Transistor
,H30R1602 Power Semiconductor
,IHW30N160R2
IHW30N160R2 IGBTs Transistors H30R1602 Soft Switching Series Power Semiconductors IC IHW30N160R2FKSA1 Soft Switching Series
Applications:
• Inductive Cooking
• Soft Switching Applications
Description:
TrenchStop® Reverse Conducting (RC-)IGBT with monolithic body diode
Features:
• Powerful monolithic Body Diode with very low forward voltage
• Body diode clamps negative voltages
• Trench and Fieldstop technology for 1600 V applications offers :
- very tight parameter distribution
- high ruggedness, temperature stable behavior
• NPT technology offers easy parallel switching capability due to
positive temperature coefficient in VCE(sat)
• Low EMI
• Qualified according to JEDEC1
for target applications
• Pb-free lead plating; RoHS compliant
Specification:IGBT NPT, Trench Field Stop 1600 V 60 A 312 W Through Hole PG-TO247-3-1
Part number | IHW30N160R2 |
Category
|
Discrete Semiconductor Products
|
Transistors - IGBTs - Single
|
|
Series
|
TrenchStop®
|
Package
|
Tube
|
IGBT Type
|
NPT, Trench Field Stop
|
Voltage - Collector Emitter Breakdown (Max)
|
1600 V
|
Current - Collector (Ic) (Max)
|
60 A
|
Current - Collector Pulsed (Icm)
|
90 A
|
Vce(on) (Max) @ Vge, Ic
|
2.1V @ 15V, 30A
|
Power - Max
|
312 W
|
Switching Energy
|
4.37mJ
|
Input Type
|
Standard
|
Gate Charge
|
94 nC
|
Td (on/off) @ 25°C
|
-/525ns
|
Test Condition
|
600V, 30A, 10Ohm, 15V
|
Operating Temperature
|
-40°C ~ 175°C (TJ)
|
Mounting Type
|
Through Hole
|
Package / Case
|
TO-247-3
|
Supplier Device Package
|
PG-TO247-3-1
|
ATTRIBUTE | DESCRIPTION |
---|---|
RoHS Status | ROHS3 Compliant |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
REACH Status | REACH Unaffected |
ECCN | EAR99 |
HTSUS |
8541.29.0095 |
Part number | IHW30N160R2FKSA1 |
Base part number | IHW30N160R2 |
EU RoHS | Compliant with Exemption |
ECCN (US) | EAR99 |
Part Status | Active |
HTS | 8541.29.00.95 |