Request A Quote
English
Home ProductsDiscrete SemiconductorsIHW30N160R2 IGBT Transistor H30R1602 Power Semiconductor
IHW30N160R2 IGBT Transistor H30R1602 Power Semiconductor
IHW30N160R2 IGBT Transistor H30R1602 Power Semiconductor IHW30N160R2 IGBT Transistor H30R1602 Power Semiconductor

IHW30N160R2 IGBT Transistor H30R1602 Power Semiconductor

Product Details:
Place of Origin: CHINA
Brand Name: Infineon Technologies/International Rectifier IOR
Certification: ROHS
Model Number: IHW30N160R2FKSA1
Payment & Shipping Terms:
Minimum Order Quantity: 10pieces
Price: Negotiated
Packaging Details: Standard package
Delivery Time: 2-15days
Payment Terms: T/T, Western Union
Supply Ability: 500000pcs
Contact Now

Detail Information
Family: Discrete Semiconductor Products Category: Electronic Components-IGBTs Transistors
IGBT TYPE: NPT, Trench Field Stop Base Part Number: H30R1602
Details: IGBT 1600V 60A 312W TO247-3 Applications: Inductive Cooking ，Soft Switching Applications
Description: IGBT NPT, Trench Field Stop 1600 V 60 A 312 W Through Hole PG-TO247-3-1 Package: TO247
Mounting Type: Through Hole
High Light:

IHW30N160R2 IGBT Transistor

,

H30R1602 Power Semiconductor

,

IHW30N160R2

Product Description

IHW30N160R2 IGBTs Transistors H30R1602 Soft Switching Series Power Semiconductors IC IHW30N160R2FKSA1 Soft Switching Series

 

Applications:
• Inductive Cooking
• Soft Switching Applications

 

Description:

TrenchStop® Reverse Conducting (RC-)IGBT with monolithic body diode
Features:
• Powerful monolithic Body Diode with very low forward voltage
• Body diode clamps negative voltages
• Trench and Fieldstop technology for 1600 V applications offers :
- very tight parameter distribution
- high ruggedness, temperature stable behavior
• NPT technology offers easy parallel switching capability due to
positive temperature coefficient in VCE(sat)
• Low EMI
• Qualified according to JEDEC1
for target applications
• Pb-free lead plating; RoHS compliant

 

Specification:IGBT NPT, Trench Field Stop 1600 V 60 A 312 W Through Hole PG-TO247-3-1

Part number IHW30N160R2
Category
Discrete Semiconductor Products
　
Transistors - IGBTs - Single
Series
TrenchStop®
Package
Tube
IGBT Type
NPT, Trench Field Stop
Voltage - Collector Emitter Breakdown (Max)
1600 V
Current - Collector (Ic) (Max)
60 A
Current - Collector Pulsed (Icm)
90 A
Vce(on) (Max) @ Vge, Ic
2.1V @ 15V, 30A
Power - Max
312 W
Switching Energy
4.37mJ
Input Type
Standard
Gate Charge
94 nC
Td (on/off) @ 25°C
-/525ns
Test Condition
600V, 30A, 10Ohm, 15V
Operating Temperature
-40°C ~ 175°C (TJ)
Mounting Type
Through Hole
Package / Case
TO-247-3
Supplier Device Package
PG-TO247-3-1

 

Environmental & Export Classifications
ATTRIBUTE DESCRIPTION
RoHS Status ROHS3 Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS

8541.29.0095

 

Part number IHW30N160R2FKSA1
Base part number IHW30N160R2
EU RoHS Compliant with Exemption
ECCN (US) EAR99
Part Status Active
HTS 8541.29.00.95

IHW30N160R2 IGBT Transistor H30R1602 Power Semiconductor 0IHW30N160R2 IGBT Transistor H30R1602 Power Semiconductor 1

 

IHW30N160R2 IGBT Transistor H30R1602 Power Semiconductor 2

 

Substitutes (1):
 
IXGH24N170 IXYS

Tag:

Infineon HEXFET Power MOSFET

MOSFET N Channel 55V 30A

55V 30A HEXFET Power MOSFET

Get in touch with us

Enter Your Message

You Might Be Into These