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Home > products > Discrete Semiconductors > V20PWM45 Vishay Semiconductor TMBS Trench MOS Barrier Schottky Rectifier

V20PWM45 Vishay Semiconductor TMBS Trench MOS Barrier Schottky Rectifier

Category:
Discrete Semiconductors
In-stock:
In Stock
Price:
Negotiated
Payment Method:
T/T, Western Union
Specifications
Family:
Discrete Semiconductor Products-Rectifier
Category:
Electronic Components
Series:
TMBS Trench MOS Barrier Schottky Rectifier
Base Part Number:
V20PWM45
Details:
Diode Schottky 45 V 20A Surface Mount SlimDPAK
Type:
Transistors - FETs, MOSFETs - Single
Description:
DIODE SCHOTTKY 45V 20A SLIMDPAK
Package:
DPak (2 Leads + Tab), TO263
Mounting Type:
Surface Mount
Highlight:

V20PWM45 Vishay Semiconductor

,

Vishay Semiconductor TMBS Trench

,

MOS Barrier Schottky Rectifier

Introduction

V20PWM45 V20PWM45C-M3/I Vishay Semiconductor High Current Density TMBS Trench MOS Barrier Schottky Rectifier DPAK Discrete Semiconductor Products
 
V20PWM45   :High Current Density Surface-Mount TMBS® (Trench MOS Barrier Schottky) Rectifier Ultra Low VF = 0.35 V at IF = 5 A
V20PWM45C High Current Density Surface-Mount TMBS® (Trench MOS Barrier Schottky) Rectifier Ultra Low VF = 0.39 V at IF = 5 A
 
APPLICATIONS
For use in low voltage high frequency DC/DC converters,
freewheeling diodes, and polarity protection applications
 
FEATURES
• Very low profile - typical height of 1.3 mm
• Trench MOS Schottky technology
• Ideal for automated placement
• Low forward voltage drop, low power losses
• High efficiency operation
• Meets MSL level 1, per J-STD-020,
LF maximum peak of 260 °C
• AEC-Q101 qualified available
- Automotive ordering code: base P/NHM3
• Material categorization
 
 
Description
This HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area.
Additional features of this product are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device for use in a wide variety of applications.
 
Features :
Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax D-Pak IRLR3915PbF I-Pak IRLU3915PbF Lea

Product Technical Specifications

Category
Discrete Semiconductor Products
 
Diodes - Rectifiers - Single
Mfr
Vishay General Semiconductor - Diodes Division
Series
Automotive, AEC-Q101, eSMP®, TMBS®
Package
Tape & Reel (TR)
Part Status
Active
Diode Type
Schottky
Voltage - DC Reverse (Vr) (Max)
45 V
Current - Average Rectified (Io)
20A
Voltage - Forward (Vf) (Max) @ If
660 mV @ 20 A
Speed
Fast Recovery =< 500ns, > 200mA (Io)
Current - Reverse Leakage @ Vr
700 µA @ 45 V
Capacitance @ Vr, F
3100pF @ 4V, 1MHz
Mounting Type
Surface Mount
Package / Case
TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package
SlimDPAK
Operating Temperature - Junction
-40°C ~ 175°C
Base Product Number
V20PWM45
Part numberV20PWM45-M3/I   V20PWM45HM3/I
Base part numberV20PWM45C-M3/I  
EU RoHSCompliant with Exemption
ECCN (US)EAR99
Part StatusActive
HTS8541.29.00.95

 
V20PWM45 Vishay Semiconductor TMBS Trench MOS Barrier Schottky RectifierV20PWM45 Vishay Semiconductor TMBS Trench MOS Barrier Schottky Rectifier
 
 
V20PWM45 Vishay Semiconductor TMBS Trench MOS Barrier Schottky Rectifier
 

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Stock:
In Stock
MOQ:
10