BSC070N10NS3GATMA1 Infineon OptiMOS Power MOSFET IC

Product Details:
Place of Origin: Malaysia
Brand Name: Infineon
Certification: ROHS
Model Number: BSC070N10NS3GATMA1
Payment & Shipping Terms:
Minimum Order Quantity: 1pieces
Price: Negotiated
Packaging Details: REEL
Delivery Time: 5 working days
Payment Terms: T/T, Western Union
Supply Ability: 5000PCS

Detail Information

Details: N-Channel 100 V 90A (Tc) 114W (Tc) Surface Mount PG-TDSON-8-1 Products Name: Integrated Circuits(IC)
Category: Electronic Components IC Family: Discrete Semiconductor Products Transistors - FETs, MOSFETs - Single
Other Name: BSC070 Package: TDSON8
Description: MOSFET N-CH 100V 90A TDSON-8 Lead Free Status: RoHS Compliant, PB Free, Lead Free
High Light:



Infineon OptiMOS Power MOSFET


BSC070N10NS3GATMA1 Infineon OptiMOS

Product Description

07N10NS BSC070N10NS3GATMA1 Infineon's OptiMOS power MOSFET N-Channel 100 V 90A 114W PG-TDSON-8 IC



Infineon's 100V OptiMOS™ power MOSFETs offer superior solutions for high efficiency, high power-density SMPS.

Compared to the next best technology this family achieves a reduction of 30% in both R DS(on) and FOM (figure of merit).


Potential Applications:
Synchronous rectification for AC-DC SMPS
Motor control for 48V–80V systems (i.e. domestic vehicles, power-tools, trucks)
Isolated DC-DC converters (telecom and datacom systems
Or-ing switches and circuit breakers in 48V systems
Class D audio amplifiers
Uninterruptable power supplies (UPS)


Summary of Features:
Excellent switching performance
World’s lowest R DS(on)
Very low Q g and Q gd
Excellent gate charge x R DS(on) product (FOM)
RoHS compliant-halogen free
MSL1 rated 2


Environmentally friendly
Increased efficiency
Highest power density
Less paralleling required
Smallest board-space consumption
Easy-to-design products



Transistors - FETs, MOSFETs - Single
Infineon Technologies
Tape & Reel (TR)
Part Status
FET Type
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
100 V
Current - Continuous Drain (Id) @ 25°C
90A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
6V, 10V
Rds On (Max) @ Id, Vgs
7mOhm @ 50A, 10V
Vgs(th) (Max) @ Id
3.5V @ 75µA
Gate Charge (Qg) (Max) @ Vgs
55 nC @ 10 V
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
4000 pF @ 50 V
FET Feature
Power Dissipation (Max)
114W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
Package / Case
Base Product Number
Parametrics BSC070N10NS3G
Ciss 3000 pF
Coss 520 pF
ID (@25°C) max 90 A
IDpuls max 360 A
Operating Temperature min max -55 °C 150 °C
Ptot max 114 W
Package SuperSO8 5x6
Polarity N
QG (typ @10V) 42 nC
RDS (on) (@10V) max 7 mΩ
Rth 1.1 K/W
VDS max 100 V
VGS(th) min max 2.7 V 2 V 3.5 V

BSC070N10NS3GATMA1 Infineon OptiMOS Power MOSFET IC 0

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