BSC010NE2LSI OptiMOS 25V N Channel Power MOSFET For Onboard Charger Mainboard
OptiMOS 25V N Channel Power MOSFET
,BSC010NE2LSI N Channel Power MOSFET
,BSC010NE2LSI OptiMOS 25V
BSC010NE2LSI OptiMOS 25V N-Channel Power MOSFET for Onboard charger Mainboard Notebook DC-DC VRD/VRM LED Motor control
Applications:
Onboard charger
Mainboard
Notebook
DC-DC
VRD/VRM
LED
Motor control
With the OptiMOS™ 25V product family, Infineon sets new standards in power density and energy efficiency for discrete power MOSFETs
and system in package. Ultra low gate and output charge, together with lowest on-state resistance in small footprint packages,
make OptiMOS™ 25V the best choice for the demanding requirements of voltage regulator solutions in servers, datacom and telecom applications. Available in halfbridge configuration (power stage 5x6).
Benefits :
Save overall system costs by reducing the number of phases in multiphase converters
Reduce power losses and increase efficiency for all load conditions
Save space with smallest packages like CanPAK™, S3O8 or system in package solution
Minimize EMI in the system making external snubber networks obsolete and the products easy to design-in.
Specifications:
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Category
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Discrete Semiconductor Products
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Transistors - FETs, MOSFETs - Single
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Mfr
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Infineon Technologies
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Series
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OptiMOS™
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Package
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Tape & Reel (TR)
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Part Status
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Active
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FET Type
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N-Channel
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Technology
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MOSFET (Metal Oxide)
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Drain to Source Voltage (Vdss)
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100 V
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Current - Continuous Drain (Id) @ 25°C
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90A (Tc)
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Drive Voltage (Max Rds On, Min Rds On)
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6V, 10V
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Rds On (Max) @ Id, Vgs
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7mOhm @ 50A, 10V
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Vgs(th) (Max) @ Id
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3.5V @ 75µA
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Gate Charge (Qg) (Max) @ Vgs
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55 nC @ 10 V
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Vgs (Max)
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±20V
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Input Capacitance (Ciss) (Max) @ Vds
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4000 pF @ 50 V
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FET Feature
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-
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Power Dissipation (Max)
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114W (Tc)
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Operating Temperature
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-55°C ~ 150°C (TJ)
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Mounting Type
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Surface Mount
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Supplier Device Package
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PG-TDSON-8-1
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Package / Case
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8-PowerTDFN
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Base Product Number
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BSC070
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| Parametrics | BSC070N10NS3G |
| Ciss | 3000 pF |
| Coss | 520 pF |
| ID (@25°C) max | 90 A |
| IDpuls max | 360 A |
| Operating Temperature min max | -55 °C 150 °C |
| Ptot max | 114 W |
| Package | SuperSO8 5x6 |
| Polarity | N |
| QG (typ @10V) | 42 nC |
| RDS (on) (@10V) max | 7 mΩ |
| Rth | 1.1 K/W |
| VDS max | 100 V |
| VGS(th) min max | 2.7 V 2 V 3.5 V |