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Home > products > Discrete Semiconductors > N Channel Transistor Discrete Semiconductors SIHF10N40D-E3 Power Mosfets

N Channel Transistor Discrete Semiconductors SIHF10N40D-E3 Power Mosfets

Category:
Discrete Semiconductors
Price:
Negotiated
Payment Method:
T/T, Western Union
Specifications
Details:
Transistor MOSFET N-CH 400V 10A 3-Pin(3+Tab) TO-220FP
Type:
Transistors - Power MOSFET
Family:
Discrete Semiconductor Products-Rectifier
Category:
Electronic Components
Base Part Number:
SIHF10N40
Channel Mode:
Enhancement
Package:
TO220
Mounting Type:
Through Hole
High Light:

SIHF10N40D-E3 Power Mosfets

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N Channel Transistor

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Discrete Semiconductors SIHF10N40D-E3

Introduction

SIHF10N40D-E3 power mosfets N channel transistor operates in enhancement mode
 
Vishay's SIHF10N40D-E3 maximum power dissipation is 33000 mW. This N channel MOSFET transistor operates in enhancement mode.

This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C.

If you need to either amplify or switch between signals in your design, then Vishay's SIHF10N40D-E3 power MOSFET is for you.
 

Product Technical Specifications

EU RoHS Compliant
ECCN (US) EAR99
Part Status Active
HTS 8541.29.00.95
Automotive No
PPAP No
Product Category Power MOSFET
Configuration Single
Channel Mode Enhancement
Channel Type N
Number of Elements per Chip 1
Maximum Drain Source Voltage (V) 400
Maximum Gate Source Voltage (V) ±30
Maximum Gate Threshold Voltage (V) 5
Maximum Continuous Drain Current (A) 10
Maximum Gate Source Leakage Current (nA) 100
Maximum IDSS (uA) 1
Maximum Drain Source Resistance (MOhm) 600@10V
Typical Gate Charge @ Vgs (nC) 15@10V
Typical Gate Charge @ 10V (nC) 15
Typical Input Capacitance @ Vds (pF) 526@100V
Maximum Power Dissipation (mW) 33000
Typical Fall Time (ns) 14
Typical Rise Time (ns) 18
Typical Turn-Off Delay Time (ns) 18
Typical Turn-On Delay Time (ns) 12
Minimum Operating Temperature (°C) -55
Maximum Operating Temperature (°C) 150
Supplier Package TO-220FP
Pin Count 3
Standard Package Name TO-220
Mounting Through Hole
Package Height 16.12(Max)
Package Length 10.63(Max)
Package Width 4.83(Max)
PCB changed 3
Tab Tab
Lead Shape Through Hole
Part number SIHF10N40D-E3
Base part number SIHF10N40
EU RoHS Compliant with Exemption
ECCN (US) EAR99
Part Status Active
HTS 8541.29.00.95

 

N Channel Transistor Discrete Semiconductors SIHF10N40D-E3 Power Mosfets

N Channel Transistor Discrete Semiconductors SIHF10N40D-E3 Power Mosfets

 

 

 

 
 

 

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