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PBHV8540X PBHV8540 Nexperia Bipolar BJT Transistor Discrete Semiconductors
PBHV8540X PBHV8540 Nexperia Bipolar BJT Transistor Discrete Semiconductors PBHV8540X PBHV8540 Nexperia Bipolar BJT Transistor Discrete Semiconductors

PBHV8540X PBHV8540 Nexperia Bipolar BJT Transistor Discrete Semiconductors

Product Details:
Place of Origin: CHINA
Brand Name: Nexperia USA Inc.
Certification: ROHS
Model Number: PBHV8540X,115
Payment & Shipping Terms:
Minimum Order Quantity: 10
Price: Negotiated
Packaging Details: Standard package
Delivery Time: 2-15days
Payment Terms: T/T, Western Union
Supply Ability: 500000pcs
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Detail Information
Family: Discrete Semiconductor Products Category: Electronic Components-Transistors
Base Part Number: PBHV8540 Details: Bipolar (BJT) Transistor NPN 400 V 500 MA 30MHz 520 MW
Type: Transistors - FETs, MOSFETs - Single Description: TRANS NPN 400V 0.5A SOT89
Package: SOT-89 Mounting Type: Surface Mount
High Light:

PBHV8540X

,

PBHV8540

,

Nexperia Bipolar BJT Transistor

Product Description

PBHV8540X PBHV8540 Nexperia Bipolar (BJT) Transistor 500V 0.5 A NPN A NPN high-voltage low VCEsat (BISS) transistor

Discrete Semiconductor Products-A NPN high-voltage low VCEsat (BISS) transistor

 

 

Description:

NPN high-voltage low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT89 (SC-62) medium power and flat lead Surface-Mounted Device (SMD) plastic package. PNP complement: PBHV9040X.

 

Application:

• LED driver for LED chain module

• LCD backlighting

• Automotive motor management

• Hook switch for wired telecom

• Switch Mode Power Supply (SMPS)

 

Features :

• High voltage

• Low collector-emitter saturation voltage VCEsat

• High collector current capability IC and ICM

• High collector current gain hFE at high IC

• AEC-Q101 qualified

 

Name Description Version

PBHV8540X SOT89 plastic surface-mounted package; die pad for good heat transfer; 3 leads

Product Technical Specifications

 

Category
Discrete Semiconductor Products
　
Transistors - Bipolar (BJT) - Single
Mfr
Nexperia USA Inc.
Part Status
Active
Transistor Type
NPN
Current - Collector (Ic) (Max)
500 mA
Voltage - Collector Emitter Breakdown (Max)
400 V
Vce Saturation (Max) @ Ib, Ic
250mV @ 60mA, 300mA
Current - Collector Cutoff (Max)
100nA
DC Current Gain (hFE) (Min) @ Ic, Vce
100 @ 50mA, 10V
Power - Max
520 mW
Frequency - Transition
30MHz
Operating Temperature
150°C (TJ)
Mounting Type
Surface Mount
Package / Case
TO-243AA
Supplier Device Package
SOT-89
Base Product Number
PBHV8540
Part number PBHV8540X,115
EU RoHS Compliant with Exemption
ECCN (US) EAR99
Part Status Active
HTS 8541.29.00.95

 

Images:

PBHV8540X PBHV8540 Nexperia Bipolar BJT Transistor Discrete Semiconductors 0PBHV8540X PBHV8540 Nexperia Bipolar BJT Transistor Discrete Semiconductors 1

 

 

 

 

 

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