PBHV8540X PBHV8540 Nexperia Bipolar BJT Transistor Discrete Semiconductors
PBHV8540X
,PBHV8540
,Nexperia Bipolar BJT Transistor
PBHV8540X PBHV8540 Nexperia Bipolar (BJT) Transistor 500V 0.5 A NPN A NPN high-voltage low VCEsat (BISS) transistor
Discrete Semiconductor Products-A NPN high-voltage low VCEsat (BISS) transistor
Description:
NPN high-voltage low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT89 (SC-62) medium power and flat lead Surface-Mounted Device (SMD) plastic package. PNP complement: PBHV9040X.
Application:
• LED driver for LED chain module
• LCD backlighting
• Automotive motor management
• Hook switch for wired telecom
• Switch Mode Power Supply (SMPS)
Features :
• High voltage
• Low collector-emitter saturation voltage VCEsat
• High collector current capability IC and ICM
• High collector current gain hFE at high IC
• AEC-Q101 qualified
Name Description Version
PBHV8540X SOT89 plastic surface-mounted package; die pad for good heat transfer; 3 leads
Product Technical Specifications
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Category
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Discrete Semiconductor Products
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Transistors - Bipolar (BJT) - Single
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Mfr
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Nexperia USA Inc.
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Part Status
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Active
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Transistor Type
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NPN
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Current - Collector (Ic) (Max)
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500 mA
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Voltage - Collector Emitter Breakdown (Max)
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400 V
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Vce Saturation (Max) @ Ib, Ic
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250mV @ 60mA, 300mA
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Current - Collector Cutoff (Max)
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100nA
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DC Current Gain (hFE) (Min) @ Ic, Vce
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100 @ 50mA, 10V
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Power - Max
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520 mW
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Frequency - Transition
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30MHz
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Operating Temperature
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150°C (TJ)
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Mounting Type
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Surface Mount
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Package / Case
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TO-243AA
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Supplier Device Package
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SOT-89
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Base Product Number
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PBHV8540
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| Part number | PBHV8540X,115 |
| EU RoHS | Compliant with Exemption |
| ECCN (US) | EAR99 |
| Part Status | Active |
| HTS | 8541.29.00.95 |
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