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Home ProductsDiscrete SemiconductorsBTS282Z E3230 TO220-7 N-Channel MOSFET 49V 80A Transistors FETs
BTS282Z E3230 TO220-7 N-Channel MOSFET 49V 80A Transistors FETs
BTS282Z E3230 TO220-7 N-Channel MOSFET 49V 80A Transistors FETs BTS282Z E3230 TO220-7 N-Channel MOSFET 49V 80A Transistors FETs

BTS282Z E3230 TO220-7 N-Channel MOSFET 49V 80A Transistors FETs

Product Details:
Place of Origin: Malaysia
Brand Name: Infineon Technologies/International Rectifier IOR
Certification: ROHS
Model Number: BTS282Z E3230
Payment & Shipping Terms:
Minimum Order Quantity: 10pieces
Price: Negotiated
Packaging Details: Standard package
Delivery Time: 2-15days
Payment Terms: T/T, Western Union
Supply Ability: 500000pcs
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Detail Information
Family: Discrete Semiconductor Products Category: Electronic Components-MOSFET (Metal Oxide)
Series: Power MOSFET Base Part Number: BTS282Z
Details: Trans MOSFET N-CH 49V 80A Automotive 7-Pin(7+Tab) TO-220 Type: Transistors - FETs, MOSFETs - Single
Description: N-Channel MOSFET 49V 80A Package: TO220-7
Mounting Type: Through Hole
High Light:

49V 80A Transistors FETs

,

N-Channel MOSFET Transistors FETs

Product Description

BTS282Z E3230 TO220-7 N-Channel MOSFET 49V 80A Transistors FETs

 

BTS282ZE3230AKSA2 power MOSFET from Infineon Technologies. Its maximum power dissipation is 300000 mW.

In order to ensure parts aren't damaged by bulk packaging, this product comes in tube packaging to add a little more

protection by storing the loose parts in an outer tube.

This MOSFET transistor has an operating temperature range of -40 °C to 175 °C.

This N channel MOSFET transistor operates in enhancement mode.

 

Specification:

Category
Discrete Semiconductor Products
　
Transistors - FETs, MOSFETs - Single
Mfr
Infineon Technologies
Series
TEMPFET®
Package
Tube
Part Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
49 V
Current - Continuous Drain (Id) @ 25°C
80A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Rds On (Max) @ Id, Vgs
6.5mOhm @ 36A, 10V
Vgs(th) (Max) @ Id
2V @ 240µA
Gate Charge (Qg) (Max) @ Vgs
232 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
4800 pF @ 25 V
FET Feature
Temperature Sensing Diode
Power Dissipation (Max)
300W (Tc)
Operating Temperature
-40°C ~ 175°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
P-TO220-7-230
Package / Case
TO-220-7

 

 

Environmental & Export Classifications
ATTRIBUTE DESCRIPTION
RoHS Status ROHS3 Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS

8541.29.0095

 

Part number BTS282Z E3230
Base part number BTS282Z
EU RoHS Compliant with Exemption
ECCN (US) EAR99
Part Status Active
HTS 8541.29.00.95

BTS282Z E3230 TO220-7 N-Channel MOSFET 49V 80A Transistors FETs 0BTS282Z E3230 TO220-7 N-Channel MOSFET 49V 80A Transistors FETs 1

 

 

 

 

Tag:

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